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Silicon carbide : Properties
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Properties of lattice - matched and strained Indium Galium Arsenide /
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APCOM 2000. Applied physics of condensed matter 2000 : Proceedings of the 6th international workshop. Kočovce, Slovak Republic. 19.- 21. June 2000
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Applied physics of condensed matter 2005 : Proceedings
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Elektrony i dyrki v poluprovodnikach : Energetičeskij spektr i dinamika
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Properties of III - V quantum wells and superlattices
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Properties of Aluminium Galium Arsenide /
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Výskum vlastností štruktúry MIS v nerovnovážnom stave kapacitnou metódou : Kand.diz.práca : V.odb. 26-10-9 : Obh. 07.03.1984 /
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Metal silicides : Properties
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Properties of gallium arsenide
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Fyzika : Fyzikálne základy elektroniky
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Fundamentals of solid-state electronics /
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Characterization of electrical properties of Schottky structures supported by modelling and simulation = Charakteristika elektro fyzikálnych vlastností Schottkyho štruktúr podporená modelovaním a simuláciou : Dok.diz.práca. Dát. obhaj. 15.12.1998, Č.ved.odb.: 26-11-9
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Skúmanie vlastností rozhrania izolant - polovodič vodivostnou metódou : Kand.diz.práca : V.odb. 26-10-9 : Obh. 07.03.1984 : Projekt III-4-3-2/2 /
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Properties of indium phosphide
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Electronic properties of engineering materials
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Mechanical behavior of diamond and other forms of carbon : Konf. San Francisco, California, USA, 17.- 21. apr. 1995 /
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Diamond and diamondlike films physics and applications IV : Proceedings. Bratislava, Slovak Republik. 18. Dec. 2004 /
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Diamond materials : Proceedings of the third international symposium /
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Vlastnosti rozhrania polovodič-izolačná vrstva štruktúry MIS skúmané kvázistatickou C-U metódou : Kand.diz.práca : V.odb. 26-10-9 : Obh. 16.09.1985 : Projekt III-4-3/2,III-6-1/13 /
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Beam interactions with materials and atoms : Section B of: Nuclear instruments & methods in physics research. Vol.120 : Konf. E-MRS'96, Strasbourg, France, 4.- 7. June 1996 /
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III-IV quantum system research
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Propertiers of wide bandgap II - VI semiconductors
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Properties of Group-IV, III-V and II - VI semiconductors