Electronic properties of doped semiconductors
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Livre |
| Langue: | anglais |
| Publié: |
Berlin ; New York
Springer-Verlag
1984
|
| Collection: | Springer series in solid-state sciences
45 |
| Sujets: | |
| Accès en ligne: | Voir à l'OPAC |
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| 008 | 171201s1984 gw a b 001 0 eng | ||
| 010 | |a 84-005420 | ||
| 020 | |a 9783662024058 | ||
| 035 | |a vtls011724877 | ||
| 039 | 9 | |y 201712010926 |z mschk03 | |
| 040 | |a DLC |c DLC |d DLC |d STUSCHK1 | ||
| 041 | 1 | |a engrus | |
| 080 | 0 | 0 | |a 537.6/22 |2 19 |
| 100 | 1 | |a Shklovskii, B. I. |q (Boris Isaakovich) |d 1944- | |
| 240 | 1 | 0 | |a Elektronnyje svojstva legirovannych poluprovodnikov |l English |
| 245 | 1 | 0 | |a Electronic properties of doped semiconductors |c B.I. Shklovskii, A.L. Efros |
| 260 | |a Berlin ; |a New York |b Springer-Verlag |c 1984 | ||
| 300 | |a xii, 388 p. |b ill. |c 23 cm | ||
| 440 | 0 | |a Springer series in solid-state sciences |v 45 | |
| 500 | |a Translation of: Elektronnyje svojstva legirovannych poluprovodnikov | ||
| 504 | |a Includes bibliographical references and index | ||
| 650 | 0 | |a Doped semiconductors | |
| 650 | 0 | |a Electron-electron interactions | |
| 650 | 0 | |a Hopping conduction | |
| 650 | 0 | |a Materials at low temperatures | |
| 700 | 1 | |a Efros, A. L. |4 aut |d 1938- | |
| 906 | |a 7 |b cbc |c orignew |d 1 |e ocip |f 19 |g y-gencatlg | ||
| 910 | |a SCHK95 | ||
| 919 | |a 978-3-662-02405-8 | ||
| 991 | |b c-GenColl |h QC611.8.D66 |i S5513 1984 |p 00037314535 |t Copy 1 |v 45 |w BOOKS | ||
| 999 | |c 1458 |d 1458 | ||