Skúmanie kvality polovodičových štruktúr na báze InAlGaN/GaN
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| Autore principale: | |
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| Altri autori: | |
| Natura: | Manoscritto Libro |
| Lingua: | slovacco |
| Pubblicazione: |
2019
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| Soggetti: | |
| Accesso online: | http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=135351 |
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| LEADER | 00000ntm a22000003a 4500 | ||
|---|---|---|---|
| 001 | stuzp69712 | ||
| 003 | SK-STU | ||
| 005 | 20190717124438.3 | ||
| 007 | ta | ||
| 008 | 150427s2015----xo-----f-mn---000-0-slo-d | ||
| 040 | |a STU |b slo | ||
| 041 | 0 | |a slo | |
| 044 | |a xo | ||
| 100 | 1 | |a Vadovský, Jakub |u 033000 |4 aut |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 86365 |U E030 |Y 549 |7 86365 | |
| 242 | 0 | 1 | |a Investigation of the Quality of Semiconductor Structures Based on InAlGaN/GaN |y eng |
| 245 | 1 | 0 | |a Skúmanie kvality polovodičových štruktúr na báze InAlGaN/GaN |
| 260 | |c 2019 | ||
| 300 | |a 40 s., |b CD-ROM | ||
| 650 | 4 | |a DLTFS |2 slo | |
| 650 | 4 | |a hlboké energetické hladiny |2 slo | |
| 650 | 4 | |a InAlGaN/GaN |2 slo | |
| 650 | 4 | |a DLTS |2 slo | |
| 650 | 4 | |a DLTFS |2 eng | |
| 650 | 4 | |a deep energy levels |2 eng | |
| 650 | 4 | |a DLTS |2 eng | |
| 650 | 4 | |a InAlGaN/GaN |2 eng | |
| 700 | 1 | |a Stuchlíková, Ľubica |u 033000 |k Z1 |4 ths |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 1997 |U E030 |Y 549 |7 A000001997 | |
| 856 | 4 | |u http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=135351 | |
| 996 | |b 284ER02835 |c E*Bc- 2835 |l EE33 |s P |a 0 |w stuzp69712_0001 | ||