Pohorelec, O., & Gregušová, D. (2023). Hole Channel GaN-based Transistor for Power Electronics: Dátum obhajoby 23.8.2023. STU v Bratislave FEI.
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Chicago Style (17th ed.) Citation
Pohorelec, Ondrej, and Dagmar Gregušová. Hole Channel GaN-based Transistor for Power Electronics: Dátum Obhajoby 23.8.2023. Bratislava: STU v Bratislave FEI, 2023.
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MLA (9th ed.) Citation
Pohorelec, Ondrej, and Dagmar Gregušová. Hole Channel GaN-based Transistor for Power Electronics: Dátum Obhajoby 23.8.2023. STU v Bratislave FEI, 2023.
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Warning: These citations may not always be 100% accurate.