Charakterizácia GaN bufferových vrstiev rastených na SiC pomocou MOCVD pri rôznych tlakoch
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| Autore principale: | |
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| Altri autori: | |
| Natura: | Manoscritto Libro |
| Lingua: | slovacco |
| Pubblicazione: |
2025
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| Soggetti: | |
| Accesso online: | http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=184537 |
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MARC
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| 242 | 0 | 1 | |a Characterisation of GaN Buffer Layers Grown on SiC by MOCVD at Various Pressures |y eng |
| 245 | 1 | 0 | |a Charakterizácia GaN bufferových vrstiev rastených na SiC pomocou MOCVD pri rôznych tlakoch |
| 260 | |c 2025 | ||
| 650 | 4 | |a buffer layer |2 eng | |
| 650 | 4 | |a HEMT |2 eng | |
| 650 | 4 | |a SiC |2 eng | |
| 650 | 4 | |a GaN |2 eng | |
| 650 | 4 | |a buffer vrstva |2 slo | |
| 650 | 4 | |a HEMT |2 slo | |
| 650 | 4 | |a SiC |2 slo | |
| 650 | 4 | |a GaN |2 slo | |
| 700 | 1 | |a Chvála, Aleš |u 033000 |k Z1 |4 ths |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 10315 |U E030 |Y 549 |7 A000010315 | |
| 856 | 4 | |u http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=184537 | |