Modelovanie a simulácia SiC MOSFET tranzistora v podmienkach UIS testu
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| Autore principale: | |
|---|---|
| Altri autori: | |
| Natura: | Manoscritto Libro |
| Lingua: | slovacco |
| Pubblicazione: |
Bratislava :
STU v Bratislave FEI,
2021
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| Soggetti: | |
| Accesso online: | https://opac.crzp.sk/?fn=detailBiblioForm&sid=4BD9478A3A7038F60C223AAC8853&seo=CRZP-detail-kniha |
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| 100 | 1 | |a Szabó, Emanuel |u 033000 |4 aut |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 79971 |U E030 |Y 549 |7 79971 | |
| 242 | 0 | 1 | |a Modeling and simulation of SiC MOSFET transistor in UIS failure testing |y eng |
| 245 | 1 | 0 | |a Modelovanie a simulácia SiC MOSFET tranzistora v podmienkach UIS testu |
| 260 | |a Bratislava : |b STU v Bratislave FEI, |c 2021 | ||
| 300 | |a 65 s. | ||
| 650 | 4 | |a tranzistor MOSFET |2 slo | |
| 650 | 4 | |a UIS test |2 slo | |
| 650 | 4 | |a SiC |2 slo | |
| 650 | 4 | |a Synopsys TCAD |2 slo | |
| 650 | 4 | |a MOSFET transistor |2 eng | |
| 650 | 4 | |a UIS test |2 eng | |
| 650 | 4 | |a Synopsys TCAD |2 eng | |
| 650 | 4 | |a SiC |2 eng | |
| 700 | 1 | |a Marek, Juraj |u 033000 |k Z1 |4 ths |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 24483 |U E030 |Y 549 |7 A000024483 | |
| 856 | 4 | |u https://opac.crzp.sk/?fn=detailBiblioForm&sid=4BD9478A3A7038F60C223AAC8853&seo=CRZP-detail-kniha | |