Simulation of Electrical Properties and Reliability of SiC Power Module
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| Format: | Manuskript Buch |
| Sprache: | Slowakisch Englisch |
| Veröffentlicht: |
2025
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| Schlagworte: | |
| Online-Zugang: | http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=184542 |
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MARC
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| 040 | |a STU |b slo | ||
| 041 | 0 | |a eng | |
| 100 | 1 | |a Alhwaidy, Osama |u 033000 |4 aut |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 122188 |U E030 |Y 549 |7 122188 | |
| 242 | 0 | 1 | |a Simulation of Electrical Properties and Reliability of SiC Power Module |y slo |
| 245 | 1 | 0 | |a Simulation of Electrical Properties and Reliability of SiC Power Module |
| 260 | |c 2025 | ||
| 650 | 4 | |a TCAD Sentaurus |2 eng | |
| 650 | 4 | |a Multiphysics Simulation |2 eng | |
| 650 | 4 | |a SiC Power Module |2 eng | |
| 650 | 4 | |a COMSOL Multiphysics |2 eng | |
| 650 | 4 | |a SiC MOSFET Power Module |2 eng | |
| 650 | 4 | |a Trench MOSFET |2 eng | |
| 650 | 4 | |a Material Thickness Optimization |2 eng | |
| 650 | 4 | |a Multiphysics Simulation |2 slo | |
| 650 | 4 | |a Trench MOSFET |2 slo | |
| 650 | 4 | |a COMSOL Multiphysics |2 slo | |
| 650 | 4 | |a TCAD Sentaurus |2 slo | |
| 650 | 4 | |a SiC MOSFET Power Module |2 slo | |
| 650 | 4 | |a Material Thickness Optimization |2 slo | |
| 650 | 4 | |a SiC Power Module |2 slo | |
| 700 | 1 | |a Chvála, Aleš |u 033000 |k Z1 |4 ths |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 10315 |U E030 |Y 549 |7 A000010315 | |
| 856 | 4 | |u http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=184542 | |