Elektrická charakterizácia MOS-HEMT štruktúr na báze GaN
Enregistré dans:
| Auteur principal: | |
|---|---|
| Autres auteurs: | |
| Format: | Manuscrit Livre |
| Langue: | slovaque |
| Publié: |
2018
|
| Sujets: | |
| Accès en ligne: | http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=137482 |
| Tags: |
Pas de tags, Soyez le premier à ajouter un tag!
|
MARC
| LEADER | 00000ntm a22000003a 4500 | ||
|---|---|---|---|
| 001 | stuzp62573 | ||
| 003 | SK-STU | ||
| 005 | 20181010105016.4 | ||
| 007 | ta | ||
| 008 | 150427s2015----xo-----f-mn---000-0-slo-d | ||
| 040 | |a STU |b slo | ||
| 041 | 0 | |a slo | |
| 044 | |a xo | ||
| 100 | 1 | |a Drobný, Jakub |u 033000 |4 aut |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 72627 |U E030 |Y 549 |7 72627 | |
| 242 | 0 | 1 | |a Electrical characterization of GaN based MOS-HEMT structures |y eng |
| 245 | 1 | 0 | |a Elektrická charakterizácia MOS-HEMT štruktúr na báze GaN |
| 260 | |c 2018 | ||
| 300 | |a 53 s., |b CD-ROM | ||
| 650 | 4 | |a interface states |2 eng | |
| 650 | 4 | |a DLTS |2 eng | |
| 650 | 4 | |a GaN |2 eng | |
| 650 | 4 | |a MOS-HEMT |2 eng | |
| 650 | 4 | |a MOS-HEMT |2 slo | |
| 650 | 4 | |a stavy rozhrania |2 slo | |
| 650 | 4 | |a GaN |2 slo | |
| 650 | 4 | |a DLTS |2 slo | |
| 700 | 1 | |a Stuchlíková, Ľubica |u 033000 |k Z1 |4 ths |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 1997 |U E030 |Y 549 |7 A000001997 | |
| 856 | 4 | |u http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=137482 | |
| 996 | |b 284EP11852 |c E*DIPL- 11852 |l EE33 |s P |a 0 |w stuzp62573_0001 | ||