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Statistical Simulation of Rand...
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Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
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Bibliographic Details
Main Author:
Kováč, Urban
Other Authors:
Reid, Dave
,
Millar, Campbell
,
Roy, Gareth
,
Roy, Scott
,
Asenov, Asen
Format:
Book Chapter
Language:
English
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