Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
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| Format: | Book Chapter |
| Language: | English |
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| LEADER | 00000nla$a2200000$$$4500 | ||
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| 001 | 0127809 | ||
| 005 | 20240502083321.6 | ||
| 041 | 0 | |a eng | |
| 044 | |a GB | ||
| 245 | 1 | 0 | |a Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET |c Urban Kováč, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov |
| 100 | 1 | |a Kováč, Urban | |
| 700 | 1 | |a Reid, Dave | |
| 700 | 1 | |a Millar, Campbell | |
| 700 | 1 | |a Roy, Gareth | |
| 700 | 1 | |a Roy, Scott | |
| 700 | 1 | |a Asenov, Asen | |