Investigations of GaNxP1-x and InGa(Al)P based active layers for light emitting diode structures directly grow on GaP substrate = Výskum a charakterizácia vlastností GaNxP1-x a In1-x-y(Ga1-x(Alx)yP aktívnych oblastí pre elektroluminiscenčné diódy pripravených na GaP substráte : č.ved.odb. 26-13-9, Obh. 10.11.2005

Bibliographic Details

Main Author:	Peternai, Loránt, 1977- (Author)
Other Authors:	Kováč, Jaroslav, 1947- (Thesis advisor)
Format:	Manuscript Book
Language:	Slovak
Published:	Bratislava : STU v Bratislave FEI, 2002
Subjects:	elektronika
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