Charakterizácia MOS heteroštruktúr na báze GaN pre bezpečné obohacovacie tranzistory
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| Autore principale: | |
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| Altri autori: | |
| Natura: | Manoscritto Libro |
| Lingua: | slovacco |
| Pubblicazione: |
2015
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| Soggetti: | |
| Accesso online: | http://is.stuba.sk/zp/portal_zp.pl?podrobnosti=111662 |
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MARC
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| 242 | 0 | 1 | |a Characterization of GaN based MOS heterostructures for safe enhanced mode transistors |y eng |
| 245 | 1 | 0 | |a Charakterizácia MOS heteroštruktúr na báze GaN pre bezpečné obohacovacie tranzistory |
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| 650 | 4 | |a heteroštruktúra |2 slo | |
| 650 | 4 | |a hustota stavov rozhrania |2 slo | |
| 650 | 4 | |a rozloženie náboja v oxide |2 slo | |
| 650 | 4 | |a GaN |2 eng | |
| 650 | 4 | |a Heterostructure |2 eng | |
| 650 | 4 | |a Interface states density |2 eng | |
| 650 | 4 | |a Oxide charge distribution |2 eng | |
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