Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
Enregistré dans:
| Auteur principal: | |
|---|---|
| Autres auteurs: | , , , , |
| Format: | Chapitre de livre |
| Langue: | anglais |
| Tags: |
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires: Statistical Simulation of Random Dopant Induced Threshold Voltage Fluctuations for 35 nm Channel Length MOSFET
- Compact model extraction from quantum corrected statistical Monte Carlo simulation of random dopant induced drain current variability
- <The> Length of the Distribution Channel As a Factor of Its Efficiency
- Dopants and Defects in Semiconductors
- <A> simulation study of the run length distribution
- Výkonové tranzistory MOSFET
- Random-Process Simulation and Measurements. /