Hole Channel GaN-based Transistor for Power Electronics : dátum obhajoby 23.8.2023
Uložené v:
| Hlavný autor: | |
|---|---|
| Ďalší autori: | |
| Médium: | Rukopis Kniha |
| Jazyk: | Slovak English |
| Vydavateľské údaje: |
Bratislava :
STU v Bratislave FEI,
2023
|
| Predmet: | |
| On-line prístup: | https://opac.crzp.sk/?fn=detailBiblioFormChildOUDF8&sid=8BA438E6D9CA2A91CF2CAAA27666&seo=CRZP-detail-kniha |
| Tagy: |
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MARC
| LEADER | 00000ntm a22000003a 4500 | ||
|---|---|---|---|
| 001 | stuzp71176 | ||
| 003 | SK-STU | ||
| 005 | 20231106144618.7 | ||
| 007 | ta | ||
| 008 | 150427s2015----xo-----f-mn---000-0-slo-d | ||
| 040 | |a STU |b slo | ||
| 041 | 0 | |a eng | |
| 044 | |a xo | ||
| 100 | 1 | |a Pohorelec, Ondrej |u 033000 |4 aut |U FEI Fakulta elektrotechniky a informatiky |T FEI Ústav elektroniky a fotoniky |X 72651 |U E030 |Y 549 |7 72651 | |
| 242 | 0 | 1 | |a Tranzistor na báze GaN s dierovým kanálom pre výkonovú elektroniku |y slo |
| 245 | 1 | 0 | |a Hole Channel GaN-based Transistor for Power Electronics : |b dátum obhajoby 23.8.2023 |
| 260 | |a Bratislava : |b STU v Bratislave FEI, |c 2023 | ||
| 300 | |a 133 s., |b Autoref. 2023, 52 s. | ||
| 500 | |a Len v elektronickej podobe | ||
| 650 | 4 | |a normally-off tranzistor |2 slo | |
| 650 | 4 | |a Mg dopovanie |2 slo | |
| 650 | 4 | |a nestability VTH |2 slo | |
| 650 | 4 | |a InAlN |2 slo | |
| 650 | 4 | |a 2DHG |2 slo | |
| 650 | 4 | |a 2DHG |2 eng | |
| 650 | 4 | |a InAlN |2 eng | |
| 650 | 4 | |a normally-off transistor |2 eng | |
| 650 | 4 | |a Mg doping |2 eng | |
| 650 | 4 | |a VTH instabilities |2 eng | |
| 700 | 1 | |a Gregušová, Dagmar |4 ths |X 5381 |7 5381 | |
| 856 | 4 | |u https://opac.crzp.sk/?fn=detailBiblioFormChildOUDF8&sid=8BA438E6D9CA2A91CF2CAAA27666&seo=CRZP-detail-kniha | |